Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes
| Autor: | Qiao Hu, Bo Peng, Haijun Jiang, Hangbing Lv, Donglin Zhang, Jianhua Yang, Zhongze Han, Yulin Zhao, Qingting Ding, Honghu Yang, Xuanzhi Liu, Jinhui Cheng, Yongkang Han |
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| Rok vydání: | 2021 |
| Předmět: |
BL-enhancing schemes
Computer science Circuit design Review 02 engineering and technology RRAM 01 natural sciences 0103 physical sciences TJ1-1570 0202 electrical engineering electronic engineering information engineering Electronic engineering Waveform Mechanical engineering and machinery Electrical and Electronic Engineering 010302 applied physics reference schemes Mechanical Engineering Amplifier 020208 electrical & electronic engineering Resistive random-access memory CMOS Control and Systems Engineering Node (circuits) sensing schemes Access time Voltage |
| Zdroj: | Micromachines Micromachines, Vol 12, Iss 913, p 913 (2021) |
| ISSN: | 2072-666X |
| DOI: | 10.3390/mi12080913 |
| Popis: | Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many issues, which can significantly degrade RRAM performance. Therefore, it is necessary to optimize the sensing schemes to improve the application range of RRAM. In this paper, the issues faced by RRAM in advanced technology nodes are summarized. Then, the advantages and weaknesses in the novel design and optimization methodologies of sensing schemes are introduced in detail from three aspects, the reference schemes, sensing amplifier schemes, and bit line (BL)-enhancing schemes, according to the development of technology in especially recent years, which can be the reference for designing the sensing schemes. Moreover, the waveforms and results of each method are illustrated to make the design easy to understand. With the development of technology, the sensing schemes of RRAM become higher speed and resolution, low power consumption, and are applied at advanced technology nodes and low working voltage. Now, the most advanced nodes the RRAM applied is 14 nm node, the lowest working voltage can reach 0.32 V, and the shortest access time can be only a few nanoseconds. |
| Databáze: | OpenAIRE |
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