Lead-Free Dual-Phase Halide Perovskites for Preconditioned Conducting-Bridge Memory
| Autor: | Min Kyung Lee, Soo Young Kim, Hyo Jung Kim, In Hyuk Im, Kootak Hong, Lee Yoon-Jung, Seung Ju Kim, Jae-Hyun Kim, Da Eun Lee, Sol A Lee, Ji Su Han, Kyung Ju Kwak, Quyet Van Le, Min-Ju Choi, Ho Won Jang |
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| Rok vydání: | 2020 |
| Předmět: |
Inert
Materials science business.industry Bend radius Halide 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Biomaterials Non-volatile memory Hysteresis Phase (matter) Electrode Optoelectronics General Materials Science 0210 nano-technology business Biotechnology Voltage |
| Zdroj: | Small (Weinheim an der Bergstrasse, Germany). 16(41) |
| ISSN: | 1613-6829 |
| Popis: | Organometallic and all-inorganic halide perovskites (HPs) have recently emerged as promising candidate materials for resistive switching (RS) nonvolatile memory due to their current-voltage hysteresis caused by fast ion migration. Lead-free and all-inorganic HPs have been researched for non-toxic and environmentally friendly RS memory devices. However, only HP-based devices with electrochemically active top electrode (TE) exhibit ultra-low operating voltages and high on/off ratio RS properties. The active TE easily reacts to halide ions in HP films, and the devices have a low device durability. Herein, RS memory devices based on an air-stable lead-free all-inorganic dual-phase HP (AgBi2 I7 -Cs3 Bi2 I9 ) are successfully fabricated with inert metal electrodes. The devices with Au TE show filamentary RS behavior by conducting-bridge involving Ag cations in HPs with ultra-low operating voltages ( 107 ), multilevel data storage, and long retention times (>5 × 104 s). The use of a closed-loop pulse switching method improves reversible RS properties up to 103 cycles with high on/off ratio above 106 . With an extremely small bending radius of 1 mm, the devices are operable with reasonable RS characteristics. This work provides a promising material strategy for lead-free all-inorganic HP-based nonvolatile memory devices for practical applications. |
| Databáze: | OpenAIRE |
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