Structural tunability and origin of two-level systems in amorphous silicon

Autor:	H. C. Jacks, M. Molina-Ruiz, M. H. Weber, J. J. Maldonis, P. M. Voyles, M. R. Abernathy, T. H. Metcalf, X. Liu, F. Hellman
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	Condensed Matter::Materials Science Condensed Matter - Materials Science Physics and Astronomy (miscellaneous) Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences General Materials Science
Zdroj:	Physical Review Materials, vol 6, iss 4
Popis:	Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si when films of thickness greater than ~300 nm are grown at 425 $^{\circ}$C and at Comment: 30 pages, 12 figures
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3827bbee25d6b59ffc3d2fe0a9afcea http://arxiv.org/abs/2111.10914 Zobrazit plný text záznamu