Performance of silicon trigger counters in the Megarad range

Autor:	P. Klein, T. Beha, W. Dünnweber, G. Lutz
Rok vydání:	1992
Předmět:	Nuclear and High Energy Physics Materials science business.industry Transistor Detector Semiconductor device Radiation Particle detector law.invention Semiconductor detector Nuclear Energy and Engineering law Optoelectronics Electrical and Electronic Engineering business Electronic circuit Diode
Zdroj:	IEEE Transactions on Nuclear Science. 39:826-831
ISSN:	1558-1578 0018-9499
DOI:	10.1109/23.159715
Popis:	The response of p-i-n diodes and of novel pixel counters, capable of signal storage, to high radiation doses was studied systematically by means of 10-MeV proton beams scattered from gold foils. The leakage current shows a more than proportional increase with increasing dose and an exponential dependence on temperature. The cooled (-50 degrees C) p-i-n diodes remain operational at the highest dose of 17.6 Mrad. As specific radiation effects of the DEPMOS counter, incorporating a MOS transistor structure on a fully depleted bulk of 280- mu m thickness, shifts of the transmission characteristics and a decrease of the acceptance period of the internal gate which allows for nondestructive readout have been observed. Annealing at room temperature was studied for both detector types. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b37aced636f818c31d8e0318650e6e84 https://doi.org/10.1109/23.159715 Zobrazit plný text záznamu