| Přispěvatelé: |
Strassburg, Martin, Buffolo M., Roccato N., Piva F., De Santi C., Brescancin R., Casu C., Caria A., Mukherjee K., Haller C., Carlin J.F., Grandjean N., Vallone M., Tibaldi A., Bertazzi F., Goano M., Verzellesi G., Mosca M., Meneghesso G., Zanoni E., Meneghini M. |
| Popis: |
III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices. |
