Ionizing radiation effects on Au/TiO2/n-Si metal–insulator-semiconductor (MIS) structure
| Autor: | Adem Tataroğlu, R. Ertugrul-Uyar, A. Buyukbas-Ulusan |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Interface layer Range (particle radiation) Materials science Equivalent series resistance business.industry Analytical chemistry Dielectric Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ionizing radiation Semiconductor 0103 physical sciences Irradiation Electrical and Electronic Engineering Metal insulator business |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 31:19846-19851 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | This paper presents the ionizing radiation effects on current-voltage (I-V) characteristics of Au/TiO2/n-Si metal-insulator-semiconductor (MIS) structure. The TiO(2)film as the dielectric interface layer of Au/n-Si was deposited using RF magnetron sputtering method. The MIS structure was exposed to gamma irradiation from Co-60 source with the dose rate of 0.69 kGy/h, and it was irradiated in the range of 0-100 kGy. The electronic parameters such as barrier height (phi(b0)), ideality factor (n), series resistance (R-s), and interface state density (N-ss) of the MIS structure were calculated from the measured I-V data. Experimental results showed that all calculated parameters change with the irradiation dose rate. To determine current conduction mechanisms of the MIS structure, the In (I-F) vs In (V) and In (I-R) vsV(1/2)curves for all irradiation doses are plotted under both forward bias and reverse bias, respectively. |
| Databáze: | OpenAIRE |
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