Modulation response of VCSELs: a physics-based simulation approach

Autor:	Alberto Tibaldi, Francesco Bertazzi, Rainer Michalzik, Michele Goano, Alberto Gullino, Pierluigi Debernardi, Markus Daubenschuz
Rok vydání:	2020
Předmět:	III-V semiconductors Aluminium compounds amplitude modulation gallium arsenide III-V semiconductors laser beams laser modes optical modulation semiconductor lasers surface emitting lasers semiconductor lasers 02 engineering and technology Gallium arsenide Semiconductor laser theory Vertical-cavity surface-emitting laser surface emitting lasers Amplitude modulation chemistry.chemical_compound 020210 optoelectronics & photonics 0202 electrical engineering electronic engineering information engineering laser modes Aluminium compounds Physics optical modulation business.industry amplitude modulation laser beams Biasing gallium arsenide Cutoff frequency chemistry Modulation Optoelectronics Focus (optics) business
Zdroj:	2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
DOI:	10.1109/nusod49422.2020.9217650
Popis:	A preliminary study of the dynamic behaviour of a GaAs/AlGaAs 850 nm VCSEL is presented, with the focus on the small-signal analysis and in particular on the optical amplitude modulation response. Simulations are performed with our in-house quantum-corrected one-dimensional drift-diffusion code D1ANA, updated to perform the AC analysis. The-3 dB cutoff frequency of the device is extracted as a function of VCSEL bias current and compared with experimental results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b331a7978294358eb9b07d9d7b087731 https://doi.org/10.1109/nusod49422.2020.9217650 Zobrazit plný text záznamu