Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method
| Autor: | Adrian Zakrzewski, Wojciech Kijaszek, Waldemar Oleszkiewicz, Marek Tłaczała, Sergiusz Patela |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon oxynitride 02 engineering and technology 01 natural sciences Nanomaterials spectroscopic ellipsometry chemistry.chemical_compound Plasma-enhanced chemical vapor deposition 0103 physical sciences General Materials Science Reflection coefficient Materials of engineering and construction. Mechanics of materials silicon oxynitride 010302 applied physics reflection coefficient business.industry Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Mechanics of Materials TA401-492 Optoelectronics Spectroscopic ellipsometry 0210 nano-technology business rf pecvd |
| Zdroj: | Materials Science-Poland, Vol 34, Iss 4, Pp 868-871 (2016) |
| Popis: | In this study, the authors deposited silicon oxynitride films by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF PECVD) method. The research explores the relationship between the deposition process parameters and the optical properties of the deposited SiOxNy films. The optical constants of SiOxNy films were measured and calculated by spectroscopic ellipsometry method. Additionally, the authors investigated the possibility of controlling the deposited film composition by the flow ratio of different gaseous precursors: ammonia (NH3), diluted silane (2%SiH4/98%N2), nitrous oxide (N2O) and nitrogen (N2). The gas mixture introduced to the working chamber during the growth of the film has the influence on the Si–O and Si–N bonds formation and the ratio between these bonds determines the refractive index of the deposited film. |
| Databáze: | OpenAIRE |
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