| Autor: |
Martin Kuball, Michael J. Uren |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Uren, M J & Kuball, M 2021, ' Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs ', Japanese Journal of Applied Physics, vol. 60, no. SB, SB0802 . https://doi.org/10.35848/1347-4065/abdb82 |
| DOI: |
10.35848/1347-4065/abdb82 |
| Popis: |
This article addresses the impact of the buffer doping on the critical performance issues of current-collapse and dynamic R ON in GaN high electron mobility transistors. It focusses on the effect of carbon, either incorporated deliberately in GaN-on-Si power switches, or as a background impurity in iron doped RF GaN-on-SiC devices. The commonality is that carbon results in the epitaxial buffer becoming p-type and hence electrically isolated from the two-dimensional electron gas by a P–N junction. Simulations which incorporate a model for leakage along dislocations are used to show that a remarkably wide range of experimental observations can be explained including dynamic R ON and the complex time dependence of drain current transients in power switches. In RF GaN-on-SiC devices, the current-collapse, the drain current dynamics, kink effect, pulse-IV and electric field distribution in the gate-drain gap can all be explained. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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