GaAs manufacturing processes conditions for micro- and nanoscale devices
| Autor: | Edmond Cambril, L. Boulley, Fabien Bayle, C. Abadie, Pierre-Baptiste Vigneron, A. Cavanna, Etienne Herth, F. Joint, N. Isac |
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| Přispěvatelé: | Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
0209 industrial biotechnology
Fabrication Materials science business.industry Strategy and Management 02 engineering and technology Semiconductor device Substrate (electronics) Management Science and Operations Research Photoresist 021001 nanoscience & nanotechnology Industrial and Manufacturing Engineering [SPI]Engineering Sciences [physics] 020901 industrial engineering & automation Nanolithography Etching (microfabrication) Optoelectronics 0210 nano-technology business Microscale chemistry Nanopillar |
| Zdroj: | Journal of Manufacturing Processes Journal of Manufacturing Processes, Society of Manufacturing Engineers, 2020, 60, pp.666-672. ⟨10.1016/j.jmapro.2020.11.006⟩ |
| ISSN: | 1526-6125 |
| Popis: | High aspect-ratio etchings are a key aspect of the fabrication of III–V semiconductor devices. The increasing demand for diverse geometries with various characteristic lengths (from the micro- to the nano-meter scale) requires the constant development of new etching recipes. In this article, we demonstrate a versatile mask-plasma combination for micro- and nanofabrication of GaAs substrate using an Inductive Coupled Plasma-Reactive Ion Etching (ICP-RIE) system. We identify five recipes at 25 ° C, with high selectivity, and apply them on one photoresist (AZ4562) and two hard (chromium and nickel) masks. The optimized etching plasma chemistry (BCl 3 /Cl 2 /Ar/N 2 ) shows a pattern transfer on GaAs with a high rate ( ≥ 5.5 μ m/min), a high anisotropy, a high selectivity ( > 4:1 with photoresist mask, and > 50:1 with hard masks), a good etch surface morphology, and smooth sidewalls profile ( > 88 ° ). Herein, we detail the requirements definition, the engineering processes with detailed recipes, the verification, and validation of three device geometries (ridges, cylinders, and nanopillars). The presented results can be valuable for a wide range of applications from the microscale to the nanoscale, and are compatible with a manufacturing process using only a single commercial ICP-RIE tool with two chambers dedicated, respectively, for metallic masks and photoresist mask. |
| Databáze: | OpenAIRE |
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