Ultrahigh-density trench capacitors in silicon and their application to integrated DC-DC conversion
| Autor: | Mickael Pommier, K Katarzyna Nowak, S Iochem, Sophie Ledain, Eric Pieraerts, L Guiraud, Henk Jan Bergveld, Jorge Ferreira, Catherine Bunel, F. Le Cornec, Fred Roozeboom |
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| Rok vydání: | 2009 |
| Předmět: |
Microelectromechanical systems
Materials science business.product_category Chemistry(all) business.industry integrated power management integrated DC-DC converter General Medicine Converters law.invention Capacitor System in package integrated passives CMOS law System-in-Package visual_art Trench Electronic component Chemical Engineering(all) visual_art.visual_art_medium Optoelectronics Die (manufacturing) business |
| Zdroj: | Procedia Chemistry. 1:1435-1438 |
| ISSN: | 1876-6196 |
| DOI: | 10.1016/j.proche.2009.07.358 |
| Popis: | This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an integrated inductive DC-DC converter based on flip-chipping a 65-nm CMOS active die on a PICS™ (Passive-Integration Connecting Substrate) passive die is described. The PICS die includes high-density (80 nF/mm2) integrated MOS trench capacitors. A converter peak efficiency of 87.5% is achieved at Vin=1.2 V, Vout=0.95 V, Iout=100 mA and 100-MHz switching frequency. The concept enables further integration with sensors, actuators and MEMS. |
| Databáze: | OpenAIRE |
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