Thermal and electrostatic reliability characterization in RF MEMS switches
Autor: | Francis Pressecq, Petra Schmitt, Xavier Lafontan, F. Flourens, Lionel Buchaillot, Patrick Pons, Dominique Collard, Q.H. Duong |
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Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
Rok vydání: | 2005 |
Předmět: |
010302 applied physics
Microelectromechanical systems Engineering business.industry Multiphysics Numerical analysis Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Finite element method Surfaces Coatings and Films Electronic Optical and Magnetic Materials Deflection (engineering) 0103 physical sciences Thermal Electronic engineering Electrical and Electronic Engineering 0210 nano-technology Safety Risk Reliability and Quality business Capacitive switch Voltage |
Zdroj: | Microelectronics Reliability Microelectronics Reliability, 2005, 45, pp.1790-1793 Microelectronics Reliability, Elsevier, 2005, 45, pp.1790-1793 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2005.07.095 |
Popis: | The reliability of RF MEMS switches is closely linked to their operational and environmental conditions. This paper examines the reliability of five different capacitive switch designs by a combined use of modeling and experimental tools. Three-dimensional multiphysics finite element analysis was performed to estimate the actuation voltage and deflection vs. temperature variations of the micro-switches. The effect of temperature and temperature cycles on switch dilatation and pull-in voltage are studied, as well as the influence of different operational signals on switch reliability. |
Databáze: | OpenAIRE |
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