Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors
| Autor: | Jeong Woo Park, Jae Won Na, Won Gi Kim, Heesoo Lee, Young Jun Tak, Hyun Jae Kim |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Fabrication Magnetic moment business.industry Transistor Oxide 02 engineering and technology Thermal treatment 021001 nanoscience & nanotechnology 01 natural sciences Magnetic field law.invention chemistry.chemical_compound Ferromagnetism chemistry Thin-film transistor law 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | ACS applied materialsinterfaces. 10(19) |
| ISSN: | 1944-8252 |
| Popis: | We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium–gallium–zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in IGZO films and oxygen atoms in air by SMFs or RMFs can be expected to enhance metal–oxide (M–O) bonds, even at low temperature (150 °C), through attraction of metal and oxygen atoms having their magnetic moments aligned in the same direction. Compared to IGZO TFTs with only thermal treatment at 300 °C, IGZO TFTs under an RMF (1150 rpm) at 150 °C show superior or comparable characteristics: field-effect mobility of 12.68 cm2 V–1 s–1, subthreshold swing of 0.37 V dec–1, and on/off ratio of 1.86 × 108. Although IGZO TFTs under an SMF (0 rpm) can be activated at 150 °C, the electrical performance is further improved in IGZO TFTs under an RMF (1150 rpm). These improvements of IGZO TFTs under an RMF (1150 rpm) are induced by increases in the number of M–O bonds due to e... |
| Databáze: | OpenAIRE |
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