A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor
| Autor: | Ma Kailu, Meile Wu, Xi Liu, Jong-Ho Lee, Xiaoshi Jin, Wang Yicheng |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Bidirectional switch 0103 physical sciences Hardware_INTEGRATEDCIRCUITS General Materials Science Materials of engineering and construction. Mechanics of materials 010302 applied physics Nano Express business.industry Doping CMOS Tunnel field effect transistor 021001 nanoscience & nanotechnology Condensed Matter Physics Tunnel field-effect transistor Mechanism (engineering) Nanoscale Subthreshold swing TA401-492 Optoelectronics 0210 nano-technology business Hardware_LOGICDESIGN |
| Zdroj: | Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021) Nanoscale Research Letters |
| Popis: | A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail. |
| Databáze: | OpenAIRE |
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