Vacancy trapping and helium decoration in Sb ion-implanted tungsten studied by Mössbauer spectroscopy
| Autor: | de Waard, Hendrik, Zhang, G.L. |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1983 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Annealing (metallurgy) Nucleation chemistry.chemical_element Tungsten Condensed Matter Physics Crystallographic defect Atomic and Molecular Physics and Optics Ion implantation chemistry Impurity Vacancy defect Physical and Theoretical Chemistry Atomic physics Helium |
| Zdroj: | Hyperfine Interactions, 14(3), 211-220. BALTZER SCI PUBL BV |
| ISSN: | 0304-3843 |
| DOI: | 10.1007/BF02043471 |
| Popis: | Mossbauer effect measurements have been performed using sources of119Sb implanted in W without and with post-implanted helium. Each of the sources was subjected to an isochronal annealing sequence in order to study vacancy trapping, helium decoration and recovery of damage. Four sites have been identified for Sb implanted in tungsten; one of these corresponds with substitutional Sb atoms, two others are assigned to Sb atoms associated with vacancies, while the last one can be either vacancy or impurity associated. The development of site occupation as a function of annealing temperature is in accordance with the one-interstitial model. Injection of 2·1016 He/cm2 leads to nucleation of helium bubbles. Helium atoms that are released from these bubbles at about 1300 K are retrapped by Sb atoms to form new bubbles. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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