Passivated, Highly Reflecting, Laser Contacted Ge Rear Side for III-V Multi-Junction Solar Cells
| Autor: | Bianca Fuhrmann, Charlotte Weiss, Jonas Schön, Frank Dimroth, Stefan Janz, Oliver Höhn |
|---|---|
| Přispěvatelé: | Publica |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Passivation chemistry.chemical_element Germanium Epitaxie Lichteinfang law.invention laser contacts law Solar cell Passivierung III-V Epitaxie und Solarzellen passivation III-V- und Konzentrator-Photovoltaik Laser power scaling Electrical and Electronic Engineering III-V solar cells Si-Folien und SiC-Abscheidungen Oberflächen: Konditionierung business.industry Doping Condensed Matter Physics Laser Electronic Optical and Magnetic Materials Silicium-Photovoltaik germanium chemistry Photovoltaik Optoelectronics Quantum efficiency Photonics business |
| Zdroj: | IEEE Journal of Photovoltaics. 11:1256-1263 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2021.3087727 |
| Popis: | This article describes the successful integration of a passivated, highly reflecting Ge rear side into a III-V multijunction solar cell. The use of lowly doped Ge and the new rear side leads to the aimed increase in Ge cell current up to 1.6 mA.cm (exp -2), demonstrated by external quantum efficiency and I-V measurements. For the contact formation, two different types of laser processes were conducted and evaluated-the laser fired contact route and the PassDop route. In both cases, the formation of a local back surface field preserves the passivation of the contact points. A laser pitch and laser power variation leads to a good performing back contact. The passivation effect is proven experimentally and is qualitatively accessed with cell simulations. |
| Databáze: | OpenAIRE |
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