Stabilizing a graphene platform toward discrete components
| Autor: | Alberto Montanaro, Amaia Zurutuza, Stéphane Xavier, Bruno Dlubak, Pierre Seneor, Bernard Servet, Pierre Legagneux, Costel Sorin Cojocaru, Stephan Hofmann, Marie-Blandine Martin, Alba Centeno, Maëlis Piquemal-Banci, John Robertson, Jean-Paul Mazellier, Sana Mzali, Odile Bezencenet, Regina Galceran |
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| Přispěvatelé: | Thales Research and Technology [Palaiseau], THALES, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, University of Cambridge [UK] (CAM), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Graphenea S.A., Hofmann, Stephan [0000-0001-6375-1459], Apollo - University of Cambridge Repository |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Fabrication
Physics and Astronomy (miscellaneous) Passivation Nanotechnology 02 engineering and technology Chemical vapor deposition 010402 general chemistry 7. Clean energy 01 natural sciences law.invention [SPI.MAT]Engineering Sciences [physics]/Materials law 4018 Nanotechnology [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS 40 Engineering [PHYS]Physics [physics] Graphene Chemistry Transistor Doping Conductance 021001 nanoscience & nanotechnology 5104 Condensed Matter Physics 0104 chemical sciences 0210 nano-technology 51 Physical Sciences Graphene nanoribbons |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2016, 109 (25), pp.253110. ⟨10.1063/1.4972847⟩ |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.4972847⟩ |
| Popis: | © 2016 Author(s).We report on statistical analysis and consistency of electrical performances of devices based on a large scale passivated graphene platform. More than 500 graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition and transferred on 4 in. SiO2/Si substrates were fabricated and tested. We characterized the potential of a two-step encapsulation process including an Al2O3 protection layer to avoid graphene contamination during the lithographic process followed by a final Al2O3 passivation layer subsequent to the GFET fabrication. Devices were investigated for occurrence and reproducibility of conductance minimum related to the Dirac point. While no conductance minimum was observed in unpassivated devices, 75% of the passivated transistors exhibited a clear conductance minimum and low hysteresis. The maximum of the device number distribution corresponds to a residual doping below 5 × 1011 cm−2 (0.023 V/nm). This yield shows that GFETs integrating low-doped graphene and exhibiting small hysteresis in the transfer characteristics can be envisaged for discrete components, with even further potential for low power driven electronics. |
| Databáze: | OpenAIRE |
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