Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

Autor:	Kai Grurmann, Heikki Kettunen, Fritz Gliem, Veronique Ferlet-Cavrois, Hagen Schmidt, Gilbert Leibeling, Martin Herrmann
Jazyk:	angličtina
Rok vydání:	2012
Předmět:	Physics ta114 business.industry NAND gate DDR3 SDRAM Heavy ion irradiation Flash (photography) MBus Gigabit Electronic engineering Optoelectronics Heavy ion business Sensitivity (electronics)
Popis:	16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b234a1407ebd42993b6fbd016f1f6c8e http://juuli.fi/Record/0246569012 Zobrazit plný text záznamu