Self-aligned flexible organic thin-film transistors with gates patterned by nano-imprint lithography
| Autor: | Christine Prietl, R. Ferrini, R. Jiawook, Frederic Zanella, A. Drost, Kris Myny, Jan Genoe, Barbara Stadlober, Roger Pretot, Roland Schmied, Hassan Hirshy, Herbert Gold, U. Kleb, Johanna Kraxner, Alexander Fian, Robert Muller, M. König, Ki-Dong Lee, N. Marjanović, Anja Haase, J. Ring, Bernd Striedinger |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
02 engineering and technology Substrate (electronics) 01 natural sciences Capacitance law.invention Biomaterials Pentacene chemistry.chemical_compound law 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Lithography Electronic circuit 010302 applied physics Organic field-effect transistor business.industry Transistor General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Thin-film transistor Optoelectronics 0210 nano-technology business |
| Zdroj: | Organic Electronics. 22:140-146 |
| ISSN: | 1566-1199 |
| Popis: | Many applications that rely on organic electronic circuits still suffer from the limited switching speed of their basic elements - the organic thin film transistor (OTFT). For a given set of materials the OTFT speed scales inversely with the square of the channel length, the parasitic gate overlap capacitance, and the contact resistance. For maximising speed we pattern transistor channels with lengths from 10 mu m down to the sub-micrometre regime by industrially scalable UV-nanoimprint lithography. The reduction of the overlap capacitance is achieved by minimising the source-drain to gate overlap lengths to values as low as 0.2 mu m by self-aligned electrode definition using substrate reverse side exposure. Pentacene based organic thin film transistors with an exceptionally low line edge roughness |
| Databáze: | OpenAIRE |
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