Relaxation of Electron Spin during High-Field Transport in GaAs Bulk

Autor: Bernardo Spagnolo, D. Persano Adorno, Stefano Spezia, Nicola Pizzolato
Přispěvatelé: Spezia, S, Persano Adorno, D, Pizzolato, N, Spagnolo, B
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Statistics and Probability
Materials science
Field (physics)
FOS: Physical sciences
Electron
Settore FIS/03 - Fisica Della Materia
Condensed Matter::Materials Science
Electric field
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Spin (physics)
Condensed Matter - Statistical Mechanics
Condensed matter physics
Spin polarization
Statistical Mechanics (cond-mat.stat-mech)
Condensed Matter - Mesoscale and Nanoscale Physics
business.industry
Doping
Relaxation (NMR)
Statistical and Nonlinear Physics
driven diffusive systems (theory)
stochastic particle dynamics (theory)
transport processes/heat transfer (theory)
Boltzmann equation
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Settore FIS/07 - Fisica Applicata(Beni Culturali
Ambientali
Biol.e Medicin)
Semiconductor
Condensed Matter::Strongly Correlated Electrons
Statistics
Probability and Uncertainty
business
Popis: A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40
Comment: 14 pages, 6 figures
Databáze: OpenAIRE
Externí odkaz: