p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm
| Autor: | J. I. Malin, Milton Feng, G. E. Stillman, D. K. Sengupta, H. C. Liu, S. L. Jackson, Lianhe Li, H. C. Kuo, S. Thomas, D.A. Ahmari, Yun-Chorng Chang |
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| Rok vydání: | 1996 |
| Předmět: |
III-V semiconductors
Materials science Infrared Radiation Physics and Astronomy (miscellaneous) Photoconductivity business.industry Infrared Photodetectors Gallium Arsenides Photodetector Substrate (electronics) Responsivity Quantum Wells Imaging detectors and sensors Photodetectors (including infrared and CCD detectors) Optoelectronics Molecular Beam Epitaxy Indium Phosphides business Quantum well infrared photodetector Quantum well Indium Arsenides Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters. 69:3209-3211 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.117963 |
| Popis: | Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data. |
| Databáze: | OpenAIRE |
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