Electrical Characterization of TbScO3/TiN Gate Stacks of MOS Capacitors and MOSFETs on Strained and Unstrained SOI

Autor:	S. Mantl, Konstantin Bourdelle, S. Lenk, Qing-Tai Zhao, J. Marcelo. J Lopes, A. Besmehn, A. Nichau, Jürgen Schubert, Eylem Durğun Özben
Rok vydání:	2010
Předmět:	Materials science business.industry Gate stack chemistry.chemical_element Silicon on insulator Characterization (materials science) law.invention Capacitor chemistry law Electronic engineering Optoelectronics Tin business
Zdroj:	ECS Transactions. 33:195-202
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3481606
Popis:	We investigated the electrical and structural properties of TbScO3 as an alternative gate dielectric. Rutherford backscattering spectrometry revealed a stoichiometric film while X-ray photo-electron spectroscopy indicated silicate formation at the interface. Capacitance-Voltage measurements resulted in well behaving C-V curves with no hysteresis and a low density of interface trap states in the range of 4x1011 (eVcm2)-1. Fully depleted (FD) SOI and sSOI MOSFETs fabricated with a full replacement gate process show a steep subthreshold slope down to 81 mV/dec and high Ion/Ioff ratios up to 108. Low field electron mobilities of 181 cm2/Vsec for SOI and 350 cm2/Vsec for sSOI, were extracted, which are comparable to MOSFETs with Hf based oxides. Gate induced drain leakage (GIDL) investigations indicate a trap assisted band to band tunneling.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1676630cb5438f87bc58ef1af333ded https://doi.org/10.1149/1.3481606 Zobrazit plný text záznamu