Engineering spin propagation across a hybrid organic/inorganic interface using a polar layer
| Autor: | Theo Kreouzis, William P. Gillin, Elvezio Morenzoni, Thomas Prokscha, P. Desai, Maureen Willis, Andreas Suter, P. Shakya, Christian Bernhard, Laura Nuccio, Nicola A. Morley, Francis L. Pratt, Leander Schulz, G. J. Nieuwenhuys, Alan J. Drew, Vivek Kumar Malik |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Giant magnetoresistance 02 engineering and technology 01 natural sciences 7. Clean energy Condensed Matter::Materials Science 0103 physical sciences General Materials Science 010306 general physics Spintronics Spin polarization Condensed matter physics business.industry Mechanical Engineering Molecular electronics Fermi energy General Chemistry Semiconductor device 021001 nanoscience & nanotechnology Condensed Matter Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Organic semiconductor Mechanics of Materials Optoelectronics Charge carrier 0210 nano-technology business |
| Zdroj: | Nature Materials |
| ISSN: | 1476-4660 1476-1122 |
| DOI: | 10.1038/nmat2912 |
| Popis: | Spintronics has shown a remarkable and rapid development, for example from the initial discovery of giant magnetoresistance in spin valves (Baibich, M. N. et al. Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. Phys. Rev. Lett. 61, 2472–2475, 1988) to their ubiquity in hard-disk read heads in a relatively short time. However, the ability to fully harness electron spin as another degree of freedom in semiconductor devices has been slower to take off. One future avenue that may expand the spintronic technology base is to take advantage of the flexibility intrinsic to organic semiconductors (OSCs), where it is possible to engineer and control their electronic properties and tailor them to obtain new device concepts (Bergenti, I. et al. Spin polarised electrodes for organic light emitting diodes. Org. Electron. 5, 309–314, 2004). Here we show that we can control the spin polarization of extracted charge carriers from an OSC by the inclusion of a thin interfacial layer of polar material. The electric dipole moment brought about by this layer shifts the OSC highest occupied molecular orbital with respect to the Fermi energy of the ferromagnetic contact. This approach allows us full control of the spin band appropriate for charge-carrier extraction, opening up new spintronic device concepts for future exploitation. |
| Databáze: | OpenAIRE |
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