The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique
| Autor: | M.A. Ahmad, Sha Shiong Ng, Zainuriah Hassan, C. Chevallier, Sidi Ould Saad Hamady, M.A.A.Z. Md Sahar, A.S. Yusof |
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| Přispěvatelé: | INOR - Universiti Sains Malaysia, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Diffraction
Materials science Mechanical Engineering Chemical process of decomposition Analytical chemistry chemistry.chemical_element Heterojunction 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Field emission microscopy Crystallinity chemistry Mechanics of Materials [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] General Materials Science Metalorganic vapour phase epitaxy [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 0210 nano-technology Indium Deposition (law) |
| Zdroj: | Materials Research Bulletin Materials Research Bulletin, Elsevier, 2020, ⟨10.1016/j.materresbull.2020.111176⟩ |
| ISSN: | 0025-5408 1873-4227 |
| DOI: | 10.1016/j.materresbull.2020.111176⟩ |
| Popis: | International audience; In this study, InGaN/GaN heterostructures were grown using metal organic vapor deposition (MOCVD) at different temperatures (800°C, 750°C and 700°C). The structural, crystallinity, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. From observation, it is found that the indium composition was obtained from XRD through the process of fitting of the simulation. The process of indium incorporation is found to be sensitive to temperature variances. When the temperature is further reduced, the indium incorporation process would become stagnant as the decomposition process of ammonia would be less efficient. FE-SEM images have revealed surface-related defects such as V-pits. The secondary energy gap is obtained from the optical characterization which confirmed the incorporation of indium in the epilayers. |
| Databáze: | OpenAIRE |
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