| Autor: |
A. Nylandsted Larsen, R. Jones, H. Kortegaard Nielsen, D.W. Palmer, K. Bonde Nielsen, Abdelmadjid Mesli, J Adey, Sven Öberg, Patrick R. Briddon, L. Dobaczewski |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
Physical review letters. 97(10) |
| ISSN: |
0031-9007 |
| Popis: |
It has been an accepted fact for more than 40 years that the $E$ center in Si (the group-$V$ impurity---vacancy pair)---one of the most studied defects in semiconductors---has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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