Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping
Autor: | Shiqiang Lu, Junyong Kang, Shuping Li, Qianying Si, Hangyang Chen |
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Rok vydání: | 2017 |
Předmět: |
lcsh:Applied optics. Photonics
Materials science Superlattice 02 engineering and technology Electroluminescence 01 natural sciences law.invention law 0103 physical sciences lcsh:QC350-467 Electrical and Electronic Engineering Leakage (electronics) 010302 applied physics business.industry Doping Wide-bandgap semiconductor lcsh:TA1501-1820 Semiconductor device 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics AlGaN superlattice p-type doping layer deep ultraviolet light-emitting diodes (DUV-LEDs) Optoelectronics Quantum efficiency 0210 nano-technology business lcsh:Optics. Light Light-emitting diode |
Zdroj: | IEEE Photonics Journal, Vol 9, Iss 3, Pp 1-7 (2017) |
ISSN: | 1943-0655 |
Popis: | The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and compared with the Al-composition (50%) conventional p-type layer AlGaN-based DUV-LEDs. The extraordinary design of DUV-LEDs with varied barrier PSL has been investigated by the advanced physical model of semiconductor device (APSYS) software by comparing the internal quantum efficiency, light output power, electroluminescence intensity, distributions of carrier concentration, and energy band diagrams. As a result of hole injection augmentation and electronic leakage reduction, the property of AlGaN-based DUV-LED with the PSL has been enhanced significantly. Moreover, the 55%-Al-composition of the superlattice barrier p-type doping layer greatly reduces the effective potential height for holes in the valence band, which is beneficial for hole injection from the PSL. The new structure improves the properties of DUV-LED and shows remarkable output performance. |
Databáze: | OpenAIRE |
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