Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Autor: Razvigor Ossikovski, Philippe Boucaud, Frederic Boeuf, Anas Elbaz, Gilles Patriarche, Nicolas Zerounian, Jean-Michel Hartmann, Xavier Checoury, Moustafa El Kurdi, Konstantinos Pantzas, Zoran Ikonic, Nils von den Driesch, Isabelle Sagnes, Detlev Grützmacher, Sébastien Sauvage, Dan Buca, Etienne Herth, Antonino Foti
Přispěvatelé: Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), University of Leeds, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), ANR-16-CE09-0029,TIPTOP_1,Fabrication de leviers de microscopie à force atomique pour des applications de spectroscopie Raman à exaltation de pointe(2016), ANR-17-CE24-0015,ELEGANTE,Laser GeSn sur silicium sous pompagae électrique(2017)
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Nature Photonics
Nature Photonics, Nature Publishing Group, 2020, 14 (6), pp.375-382. ⟨10.1038/s41566-020-0601-5⟩
Nature photonics 14(6), 375 (2020). doi:10.1038/s41566-020-0601-5
Nature Photonics, 2020, 14 (6), pp.375-382. ⟨10.1038/s41566-020-0601-5⟩
ISSN: 1749-4885
1749-4893
Popis: Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 μm have thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform. Continuous-wave lasing in strained GeSn alloys is reported at temperatures of up to 100 K. The approach offers a route towards a group-IV-on-silicon laser.
Databáze: OpenAIRE
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