Features of formation of microwave GaAs structures on homo and hetero-transitions for the sub-microconnection of the lsic structures
| Autor: | Sviatoslav Novosiadlyi, Stepan Novosiadlyi, Halyna Klym, Volodymyr Gryga, Bogdan Dzundza, Volodymyr Mandzyuk, Omelian Poplavskyi |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Electron mobility
Materials science buffer layer Silicon 020209 energy 0211 other engineering and technologies Energy Engineering and Power Technology chemistry.chemical_element Germanium 02 engineering and technology Nitride Epitaxy Industrial and Manufacturing Engineering Arsenide Gallium arsenide chemistry.chemical_compound Management of Technology and Innovation 021105 building & construction lcsh:Technology (General) 0202 electrical engineering electronic engineering information engineering lcsh:Industry Electrical and Electronic Engineering Gallium business.industry Applied Mathematics Mechanical Engineering complementary structures Computer Science Applications magnetron deposition low-temperature epitaxy chemistry Control and Systems Engineering Optoelectronics lcsh:T1-995 lcsh:HD2321-4730.9 business integrated circuits |
| Zdroj: | Eastern-European Journal of Enterprise Technologies, Vol 1, Iss 5 (97), Pp 13-19 (2019) |
| ISSN: | 1729-4061 1729-3774 |
| Popis: | The features of the formation of microwave GaAs structures are considered and a set of studies is carried out to create a serial technology of large-scale integrated circuit structures (LSIC), including the number of microwaves on GaAs epitaxial layers deposited on monosilicon substrates. The conditions for the formation of a two-dimensional electron gas in hetero-structures with the determination of electron mobility depending on the orientation of the surface were investigated. For hetero-structures on the surface of a semi-insulated GaAs substrate rotated from the plane (100) at an angle of 6–10º with oxygen content on the initial surface С0=10–50 % relative to the gallium peak of the Auger spectrum, a strong mobility anisotropy was found due to an increase in the angle of reorientation and incomplete annealing of carbon from the initial surface of the GaAs substrate. For the deposited layers of gallium arsenide on monosilicon substrates epitaxial technology is used, which can significantly improve the purity of the obtained material, namely, significantly reduce the level of oxygen and carbon isoconcentration impurities, which strongly affect the charge state of the interface. For the formation of structural layers on GaAs, the technology for the formation of nitride layers of Si3N4, AlN, BN by the magnetron method at low substrate temperatures and a given stoichiometry was developed and investigated. The combination of gallium epitaxial nano-silicon arsenide technology to silicon substrates became realistically possible only with the development of technology of magnetron precipitated buffer layers of germanium. The technology of the formation of logical elements NOT, OR-NOT, AND-NOT of high speed with low threshold voltage is developed, which allows to build high-speed chips of combination and sequential types on complementary structures |
| Databáze: | OpenAIRE |
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