Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors
| Autor: | Edsger C. P. Smits, Fabio Biscarini, M. Spijkman, Dago M. de Leeuw, Johannes Franciscus Maria Cillessen, Paul W. M. Blom |
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| Přispěvatelé: | Zernike Institute for Advanced Materials |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) PROTEINS Gate dielectric HOL - Holst Nanotechnology 02 engineering and technology Electrolyte DEVICE 01 natural sciences law.invention symbols.namesake law 0103 physical sciences Nernst equation Electrochemical potential 010302 applied physics TS - Technical Sciences business.industry Transistor Mechatronics Mechanics & Materials 021001 nanoscience & nanotechnology symbols Optoelectronics Field-effect transistor ISFET Electronics 0210 nano-technology business Order of magnitude |
| Zdroj: | Applied Physics Letters, 98(4):043502 Applied Physics Letters, 4, 98 |
| ISSN: | 0003-6951 |
| Popis: | The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited to 59 mV/pH, which is the maximum detectable change in electrochemical potential according to the Nernst equation. Here we demonstrate a transducer based on a ZnO dual-gate field-effect transistor that breaches this boundary. To enhance the response to the pH of the electrolyte, a self-assembled monolayer has been used as a top gate dielectric. The sensitivity scales linearly with the ratio between the top and bottom gate capacitances. The sensitivity of our ZnO ISFET of 22 mV/pH is enhanced by more than two orders of magnitude up to 2.25 V/pH. © 2011 American Institute of Physics. |
| Databáze: | OpenAIRE |
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