Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
| Autor: | R. Lo Nigro, Alessia Frazzetto, Vito Raineri, Edoardo Zanetti, Filippo Giannazzo, Mario Saggio, Fabrizio Roccaforte |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Dopant Annealing (metallurgy) Mechanical Engineering Schottky barrier Contact resistance Condensed Matter Physics Aluminum implantation Threshold voltage stomatognathic system Mechanics of Materials morphology Electronic engineering Surface roughness General Materials Science Composite material sheet resistance Ohmic contact Ohmic contacts Sheet resistance |
| Zdroj: | Materials science forum 717-720 (2012): 825–828. doi:10.4028/www.scientific.net/MSF.717-720.825 info:cnr-pdr/source/autori:Frazzetto A, Roccaforte F, Giannazzo F, Lo Nigro R, Saggio M, Zanetti E, Raineri V/titolo:Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC/doi:10.4028%2Fwww.scientific.net%2FMSF.717-720.825/rivista:Materials science forum/anno:2012/pagina_da:825/pagina_a:828/intervallo_pagine:825–828/volume:717-720 |
| ISSN: | 1662-9752 |
| Popis: | This paper reports on the effects of different post-implantation annealings on the electrical properties of interfaces to p-type implanted 4H-SiC. The morphology of p-type implanted 4H-SiC was controlled using a capping layer during post-implantation activation annealing of the dopant. Indeed, the surface roughness of Al-implanted regions strongly depends on the use of the protective capping layer during the annealing. However, while the different morphological conditions do not affect the macroscopical electrical properties of the implanted SiC (such as the sheet resistance), they led to an improvement of the morphology and of the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions. These electrical and morphologic improvements were associated with a lowering of Schottky barrier height. Preliminary results showed that the different activation annealing conditions of p-type implanted SiC can affect also the electrical parameters (like threshold voltage and mobility) of lateral MOSFETs. |
| Databáze: | OpenAIRE |
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