Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation

Autor:	Juyoung Lee, Soo-Min Jin, In-Ho Nam, Hea-Jee Kim, Yun-Heub Song, Tae-Hun Shim, Shin-Young Kang, Jea-Gun Park
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	Phase-change memory Materials science Multi-level cell business.industry Sputtering Superlattice Optoelectronics Electrical engineering. Electronics. Nuclear engineering Electrical and Electronic Engineering business Power (physics) TK1-9971
Zdroj:	Electronics Letters, Vol 58, Iss 1, Pp 38-40 (2022)
ISSN:	0013-5194
Popis:	The multi‐level feature of GeTe/Sb2Te3 interfacial phase change memory was achieved by applying a designed voltage‐based pulse. It stably demonstrated five multi‐level states without interference for 90 cycles by varying the pulse width. GeTe/Sb2Te3 interfacial phase change memory demonstrated retention time of > 1.0 × 103 s, presenting the significantly low drift coefficient (ν) of
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0b46453f9ca9eb66fc5edf77683335b https://doaj.org/article/80683cc1d6544114bbd798f46ae2033e Zobrazit plný text záznamu Plný text