Atmospheric Pressure Spatial ALD Layer for Ambient, Thermally and Light Stable p-i-n Planar Perovskite Solar Cells
| Autor: | Mehrdad Najafi, Tom Arneouts, Paul Poodt, Valerio Zardetto, Alessia Senes, Ronn Andriessen, Dong Zhang, Sjoerd Veenstra, Marco Chippari, Raoul Joly |
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| Přispěvatelé: | Molecular Materials and Nanosystems |
| Rok vydání: | 2018 |
| Předmět: |
Solar cells
Materials science 02 engineering and technology 010402 general chemistry Lead compounds Perovskite 01 natural sciences Atomic layer deposition Thermal Convergence of numerical methods Planar architecture Thermal stability SDG 7 - Affordable and Clean Energy Electrodes perovskite Perovskite (structure) Top electrode Atmospheric pressure Metal contacts business.industry Perovskite solar cells top electrode stability Light soaking 021001 nanoscience & nanotechnology Energy conversion 0104 chemical sciences Indium tin oxide Ambient environment ITO electrodes spatial ALD Metals Electrode Optoelectronics Metal oxides Device stability 0210 nano-technology business Layer (electronics) Spatial ALD Stability SDG 7 – Betaalbare en schone energie |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018-A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, 10 June 2018 through 15 June 2018, 3514-3517 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018-A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, 3514-3517 STARTPAGE=3514;ENDPAGE=3517;TITLE=2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018-A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
| ISSN: | 3514-3517 |
| Popis: | In order to bring the organo-lead halide perovskite solar cells (PSC) towards the commercialization, the device stability needs to be drastically improved. Our approach relies on the introduction of a compact metal oxide (MeO) layer in a p-i-n planar architecture by means of atmospheric pressure spatial atomic layer deposition (s-ALD) technique. The presence of this additional layer improves the stability towards the ambient environment as well as during a thermal stress test carried out at 85°C. Furthermore, we observe that replacing the top metal contact with a sputtered ITO electrode can prolong the device stability both under thermal and light soaking tests. © 2018 IEEE. |
| Databáze: | OpenAIRE |
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