1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)
| Autor: | Christoph Doering, Thomas Henning Loeber, Johannes Strassner, Henning Fouckhardt |
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| Rok vydání: | 2018 |
| Předmět: |
Photoluminescence
Materials science Article Subject lcsh:TK7800-8360 02 engineering and technology Substrate (electronics) 0502 economics and business Antimonide Monolayer lcsh:QC350-467 Electrical and Electronic Engineering Anisotropy Spectroscopy Wetting layer business.industry lcsh:Electronics 05 social sciences 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Quantum dot Optoelectronics ddc:500 pacs:80.00.00 0210 nano-technology business lcsh:Optics. Light 050203 business & management |
| Zdroj: | Advances in OptoElectronics, Vol 2018 (2018) |
| ISSN: | 1687-5648 1687-563X |
| DOI: | 10.1155/2018/8908354 |
| Popis: | III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained attention for the last 12 years. There is a scientific dispute on whether there is a wetting layer before antimonide QD formation, as commonly expected for Stransky-Krastanov growth, or not. Usually ex situ photoluminescence (PL) and atomic force microscope (AFM) measurements are performed to resolve similar issues. In this contribution, we show that reflectance anisotropy/difference spectroscopy (RAS/RDS) can be used for the same purpose as an in situ, real-time monitoring technique. It can be employed not only to identify QD growth via a distinct RAS spectrum, but also to get information on the existence of a wetting layer and its thickness. The data suggest that for antimonide QD growth the wetting layer has a thickness of 1 ML (one monolayer) only. |
| Databáze: | OpenAIRE |
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