Resistive Interconnection Localization
| Autor: | Victoria J. Bruce, R.M. Ring, Charles F. Hawkins, Michael R. Bruce, Paiboon Tangyunyong, Edward I. Cole, Wan-Loong Chong |
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| Rok vydání: | 2001 |
| Předmět: |
Interconnection
Resistive touchscreen Microscope Materials science business.industry Electrical engineering hemic and immune systems chemical and pharmacologic phenomena Laser Signal biological factors law.invention Optical imaging law parasitic diseases Optoelectronics business Electrical conductor |
| Zdroj: | ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis. |
| ISSN: | 0890-1740 |
| Popis: | Resistive Interconnection Localization (RIL) is a new scanning laser microscope analysis technique that directly and rapidly localizes defective IC vias, contacts, and conductors from the front side and backside. RIL uses a scanned laser to produce localized thermal gradients in IC interconnections during functional testing. A change in the pass/fail state with localized heating of the IC identifies the failing site. The technique reduces the time to locate a resistive via from months to minutes. The sources of defective vias, the physics of RIL signal generation, and examples of RIL analysis are presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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