Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers
| Autor: | P. Wei, Raveen Kumaran, Shawn Penson, François Schiettekatte, Wei Li, Scott E. Webster, Thomas Tiedje |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Ti:sapphire laser Physics::Optics chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Neodymium Atomic and Molecular Physics and Optics Pulsed laser deposition 010309 optics Condensed Matter::Materials Science Optics chemistry Silicon on sapphire Condensed Matter::Superconductivity 0103 physical sciences Sapphire 0210 nano-technology business Lasing threshold Molecular beam epitaxy |
| Zdroj: | Optics letters. 34(21) |
| ISSN: | 1539-4794 |
| Popis: | Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the Nd(3+) ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at 1096 nm with an emission cross section of 11.9x10(-19) cm(2), similar to the 1064 nm line of Nd:YVO(4). |
| Databáze: | OpenAIRE |
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