Large-area CMOS SPADs with very low dark counting rate
| Autor: | Franco Zappa, Federica Villa, Alberto Tosi, Daniel Durini, S. Bellisai, G. Ripamonti, Werner Brockherde, Simone Tisa, Uwe Paschen, Danilo Bronzi, Sascha Weyers |
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| Rok vydání: | 2013 |
| Předmět: |
Physics
Microlens Photon sezele business.industry Photodetector 02 engineering and technology Chip 01 natural sciences 7. Clean energy Photon counting Photodiode law.invention 010309 optics 020210 optoelectronics & photonics Optics CMOS law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics business Diode |
| DOI: | 10.1117/12.2004209 |
| Popis: | We designed and characterized Silicon Single -Photon Avalanche Diodes (SPADs) fabricated in a high -voltage PCMOS technology, achieving state -of-the -art low Dark Counting Rate (DCR), very large diameter, and extended Photon Detection Effici ency (PDE) in the Near Ultraviolet. So far, different groups fabricated CMOS SPADs in scaled technologies, but with many drawbacks in active area dimensions (just a few micrometers), excess bias (just few Volts), DCR ( many hundreds of counts per second, cp V IRUVPDOO PGHYLFHV ) and PDE (just few tens % in the visible UDQJH 7KHQRYHO&02663$'VWUXFWXUHVZLWK P P PDQG PGLDPHWHUVFDQEHRSHUDWHGDWURRPtemperature and show DCR o f 100 cps, 2 kcps, 20 kcps and 10 0 kcps, respective ly, even when operated at 6 V excess bias. Thanks to the excellent performances, these large CMOS SPADs are exploitable in monolithic SPAD -based arrays with on -chip CMOS electronics, e.g. for time -resolved spectrometers with no need of microlenses (thanks to high fill -factor). ,QVWHDGWKHVPDOOHU&02663$'V H J WKH PGHYLFHVZLWKMXVW FSVDWURRPWHPSHUDWXUHDQG 9H[FHVVbias, are the viable candidates for dense 2D CMOS SPAD imagers and 3D Time -of -Flight ranging chips. Keywords: Single -photon ava lanche photodiode, photodetectors, photon counting, complementary metal -oxide semiconductor. |
| Databáze: | OpenAIRE |
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