Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications
| Autor: | Kyle Braam, Feng Pan, Jaewon Jang, Vivek Subramanian |
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| Rok vydání: | 2012 |
| Předmět: |
Resistive touchscreen
Materials science Chalcogenide business.industry Electrical Equipment and Supplies Mechanical Engineering Silver Compounds Nanoparticle Electrolyte Electric Capacitance Flexible electronics Non-volatile memory chemistry.chemical_compound chemistry Mechanics of Materials Electric Impedance Nanoparticles Optoelectronics General Materials Science Selenium Compounds business Solution process Low voltage |
| Zdroj: | Advanced Materials. 24:3573-3576 |
| ISSN: | 0935-9648 |
| DOI: | 10.1002/adma.201200671 |
| Popis: | Solution-processed mechanically flexible resistive random access memories are fabricated using Ag(2)Se nanoparticles; the fabricated Ag/Ag(2)Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage ( |
| Databáze: | OpenAIRE |
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