Performance Enhancement of TiZO Thin Film Transistors by Introducing a Thin ITO Interlayer
| Autor: | Jian Cai, Shuaipeng Wang, Tiantian Wei, Yi Wang, Dedong Han, Dongyan Zhao, Zhen Fu, Yidong Yuan, Haifeng Zhang, Wen Yu, Yanning Chen, Yubo Wang |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Titanium-doped zinc oxide chemistry.chemical_element 02 engineering and technology Zinc 01 natural sciences interlayer thickness dual-layer channel 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics business.industry Doping thin film transistors oxygen vacancy 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Indium tin oxide chemistry Thin-film transistor Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology Performance enhancement business Layer (electronics) lcsh:TK1-9971 Single layer Biotechnology Titanium |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 7, Pp 1302-1305 (2019) |
| ISSN: | 2168-6734 |
| Popis: | In order to explore the influence of interlayer between dielectric layer and channel layer on performance of thin film transistors (TFTs), the single layer titanium doped zinc oxide (TiZO) TFTs and the dual layer indium tin oxide (ITO)/TiZO TFTs were fabricated successfully in this work. The effects of interlayer thickness on the performance of TFTs were studied and the optimal thickness condition was obtained. The experimental results indicate that the introduction of interlayer contributes to the improvement of TFT characteristics. In addition, the dual-layer ITO/TiZO TFTs also present a good uniformity, which is suitable for large-area display applications. |
| Databáze: | OpenAIRE |
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