Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN
| Autor: | Ching-Ting Lee, Jyun Yong Li, Day Shan Liu, Hong Jyun Lin, Wei Hua Hsiao, Tai Hong Chen, Nan Jay Wu, Li-Wen Lai |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
figure-of-merit Oxide chemistry.chemical_element 02 engineering and technology Ti interlayer 01 natural sciences lcsh:Technology lcsh:Chemistry chemistry.chemical_compound 0103 physical sciences Electronic engineering Figure of merit General Materials Science Instrumentation Ohmic contact n-GaN lcsh:QH301-705.5 010302 applied physics Fluid Flow and Transfer Processes business.industry lcsh:T Process Chemistry and Technology Contact resistance General Engineering Schottky diode ohmic contact transparent electrode 021001 nanoscience & nanotechnology Nitrogen lcsh:QC1-999 Computer Science Applications Indium tin oxide cosputtered ITO-ZnO chemistry lcsh:Biology (General) lcsh:QD1-999 lcsh:TA1-2040 Electrode Optoelectronics 0210 nano-technology business lcsh:Engineering (General). Civil engineering (General) lcsh:Physics |
| Zdroj: | Applied Sciences, Vol 6, Iss 2, p 60 (2016) Applied Sciences; Volume 6; Issue 2; Pages: 60 |
| ISSN: | 2076-3417 |
| Popis: | Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of the ITO-ZnO/n-GaN system was lower than that of the ITO/n-GaN system. By placing a thin Ti interlayer between the ITO-ZnO/n-GaN interface, nonalloyed ohmic contact was achieved. The inset Ti interlayer was both beneficial both for enhancing the outdiffusion of the nitrogen atoms at the surface of the n-GaN and suppressing the indiffusion of oxygen atoms from the surface of the ITO-ZnO to n-GaN. The figure-of-merit (FOM), evaluated from the specific contact resistance and optical property of the Ti/ITO-ZnO system’s contact to the n-GaN epilayer, was optimized further at an adequate thickness of the Ti interlayer. |
| Databáze: | OpenAIRE |
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