A New SiC Power MOSFET Model With a Parameter Optimization Procedure
| Autor: | Zouheir Riah, Yacine Azzouz, Ali Alhoussein, Hadi Alawieh |
|---|---|
| Přispěvatelé: | Pôle Electronique et Systèmes, Institut de Recherche en Systèmes Electroniques Embarqués (IRSEEM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-École Supérieure d’Ingénieurs en Génie Électrique (ESIGELEC)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-École Supérieure d’Ingénieurs en Génie Électrique (ESIGELEC), École Supérieure d’Ingénieurs en Génie Électrique (ESIGELEC) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Computer science
020209 energy 020208 electrical & electronic engineering Spice [SPI.NRJ]Engineering Sciences [physics]/Electric power Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology [SPI.TRON]Engineering Sciences [physics]/Electronics [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism Fitting algorithm Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Power MOSFET ComputingMilieux_MISCELLANEOUS Hardware_LOGICDESIGN |
| Zdroj: | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), Sep 2019, Genova, Italy. pp.P.1-P.11, ⟨10.23919/EPE.2019.8915569⟩ |
| Popis: | In this paper, a characterization and comparison of SPICE models developed by two leading manufacturers of SiC power MOSFETs is carried out. A new SiC power MOSFET model is proposed which combines different aspects of the two manufacturers' models. A fitting algorithm is developed and then used to adjust the new model's parameters to performance data of SiC power MOSFETs. |
| Databáze: | OpenAIRE |
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