Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
| Autor: | Heiner Ryssel, Tobias Erlbacher, Mathias Rommel, V. Yanev, Albena Paskaleva, B. Amon, Christian Fachmann, Johannes Heitmann, S. Petersen, Anton J. Bauer, Wenke Weinreich, Martin Lemberger, Uwe Schroeder |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) film morphology business.industry Nanotechnology Conductive atomic force microscopy atomic-force Nanocrystalline material Amorphous solid Characterization (materials science) tunneling Transmission electron microscopy Microscopy microscopy Optoelectronics Energy filtered transmission electron microscopy characterization business thin high-k dielectric High-κ dielectric |
| Popis: | High-k dielectric layers (HfSixOy and ZrO2) with different film morphologies were investigated by tunneling atomic-force microscopy (TUNA). Different current distributions were observed for amorphous and nanocrystalline films by analyzing TUNA current maps. This even holds for crystalline layers where highly resolved atomic-force microscopy cannot detect any crystalline structures. However, TUNA enables the determination of morphology in terms of differences in current densities between nanocrystalline grains and their boundaries. The film morphologies were proven by high-resolution transmission electron microscopy. The investigations show TUNA as powerful current mapping tool for the characterization of morphology in thin high-k films on a nanoscale. |
| Databáze: | OpenAIRE |
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