An MMIC low-noise amplifier design technique
| Autor: | Rodrigo Reeves, Charles R. Lawrence, Todd Gaier, Stephen Sarkozy, Kieran Cleary, Jacob Kooi, Anthony C. S. Readhead, Ahmed Akgiray, Sander Weinreb, Lorene Samoska, Pekka Kangaslahti, Richard Lai, Rohit Gawande, Andy Fung, Mikko Varonen |
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| Přispěvatelé: | Özyeğin University, Akgiray, Ahmed |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Engineering
Cryogenic POWER low-noise amplifiers (LNAs) 02 engineering and technology High-electron-mobility transistor Low-noise amplifiers (LNAs) 01 natural sciences monolithic microwave integrated circuit (MMIC) BAND law.invention law GHZ 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering THZ Electrical and Electronic Engineering Wideband TEMPERATURE Monolithic microwave integrated circuit 010302 applied physics Monolithic microwave integrated circuit (MMIC) Noise temperature Radiation Noise measurement ta213 business.industry Amplifier Transistor Electrical engineering 020206 networking & telecommunications Condensed Matter Physics Low-noise amplifier business InP HEMT |
| Popis: | Due to copyright restrictions, the access to the full text of this article is only available via subscription. In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26-33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K. Jet Propulsion Laboratory, California Institute of Technology ; Oak Ridge Associated Universities under NASA Postdoctoral Program (NPP) ; Academy of Finland ; Alfred Kordel Foundation ; National Aeronautics and Space Administration |
| Databáze: | OpenAIRE |
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