Conformal Deposition of Conductive Single-Crystalline Cobalt Silicide Layer on Si Wafer via a Molecular Approach
| Autor: | Olha Sereda, David Baudouin, Chih-Jen Shih, Tigran Margossian, Sudhir Kumar, Pierre-Emmanuel Gaillardon, Christophe Copéret, Dmitry Zemlyanov, Tsung-Han Lin, Renato Zenobi, Ivan Marozau, Li-Qing Zheng, Giovanni De Micheli |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry General Chemical Engineering Transistor 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Electrical resistivity and conductivity law Materials Chemistry Surface roughness Deposition (phase transition) Optoelectronics Wafer 0210 nano-technology business Electrical conductor Layer (electronics) Ohmic contact |
| Zdroj: | Chemistry of Materials. 30:2168-2173 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/acs.chemmater.8b00701 |
| Popis: | The realization of metal–semiconductor contacts plays a significant role in ultrascaled integrated circuits. Here, we establish a low-temperature molecular approach for the conformal deposition of a 20 nm Co-rich layer on Si (100) wafers by reaction in solution of Co2(CO)8 with SiH4. Postannealing at 850 °C under vacuum (∼10–5 mbar) yields a crystalline CoSi2 film with a lower surface roughness (Rrms = 5.3 nm) by comparison with the conventional physical method; this layer exhibiting a metallic conductive behavior (ohmic behavior) with a low resistivity (ρ = 11.6 μΩ cm) according to four-point probe measurement. This approach is applicable to trench-structured wafers, showing the conformal layer deposition on 3D structures and showcasing the potential of this approach in modern transistor technology. |
| Databáze: | OpenAIRE |
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