Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs
| Autor: | Arnulf Leuther, T. Feltgen, F. Benkhelifa, W. Jantz, Michael Dammann |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2003 |
| Předmět: |
HEMTs auf InP Substrat
Electron mobility Materials science Aktivierungsenergie GaAS Mineralogy degradation mechanisms Degradationsmechanismus law.invention Reliability (semiconductor) law biased accelerated life test Ohmic contact HEMT reliability business.industry InP Transistor Zuverlässigkeit Lebensdauer Condensed Matter Physics Electronic Optical and Magnetic Materials activation energy life time Ohmsche Kontakt Degradation Degradation (geology) Optoelectronics InP-based HEMT ohmic contact degradation Dislocation business Hot electron Voltage |
| Zdroj: | physica status solidi (a). 195:81-86 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/pssa.200306303 |
| Popis: | The long-term stability of AlGaAs/GaAs and InAlAs/InGaAs high electron mobility transistors (HEMTs), tested under high drain voltage and/or high temperature operation is reported. HEMTs with high In content in the active channel, alternatively fabricated an InP substrates and on GaAs substrates covered by a metamorphic buffer (MHEMT), are compared. Despite the high dislocation density in the buffer layer MHEMTs and InP based HEMTs exhibit comparable reliability. AlGaAs/GaAs HEMTs are more reliable than their InAlAs/InGaAs counterparts, especially when operated at high drain voltage. Failure mechanisms are thermally activated gate sinking, Ohmic contact degradation and hot electron induced degradation. |
| Databáze: | OpenAIRE |
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