Two different phase-change origins with chemical- and structural-phase-changes in C doped (1.5 wt.%) In3Sb1Te2
| Autor: | Min-Cherl Jung, Yongjik Lee, Toshio Sasaki, Suyoun Lee, Kyu-yong Kim, Dong-Won Ahn |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Information storage Multidisciplinary Materials science Chemical physics Doping Analytical chemistry Synchrotron radiation 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Amorphous solid Phase change Chemical state Sputtering 0103 physical sciences Thin film 0210 nano-technology Sheet resistance |
| Zdroj: | Scientific Reports. 6 |
| ISSN: | 2045-2322 |
| Popis: | We fabricated C-doped (1.5 wt.%) In3Sb1Te2 (CIST) thin films with amorphous phase (a-CIST) using a sputter method. Two electrical-phase-changes at 250 and 275 °C were observed in the sheet resistance measurement. In order to understand the origin of these electrical-phase-changes, all samples were characterized by XRD, TEM, and HRXPS with synchrotron radiation. In a-CIST, only weak Sb-C bonding was observed. In the first electrical-phase-change at 250 °C, strong Sb-C bonding occurred without an accompanying structural/phase change (still amorphous). On the other hand, the second electrical-phase-change at 275 °C was due to the structural/phase change from amorphous to crystalline without a chemical state change. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|