Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations
| Autor: | Philippe Paillet, Nicolas Richard, Thierry Lagutere, Melanie Raine, Olivier Duhamel, Claude Marcandella, Jonathan Riffaud, Francois Andrieu, M. Martinez, Maud Vinet, Sylvain Barraud, Marc Gaillardin |
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| Přispěvatelé: | Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
surrounding gate
single-event transient (SET) silicon-on-insulator tri-gate silicon nanowires multiple gate 01 natural sciences gate length law.invention Transient analysis heavy ion irradiations law SET generation generated current transients Transistor Monte Carlo methods fin field-effect transistor (FinFET) simulation radiation hardening (electronics) Amplitude Nanoscale devices SET characteristics particle-matter interaction nanowires Optoelectronics Field-effect transistor Technology CAD Nuclear and High Energy Physics Silicon Materials science nanowire width single-event transient response Nanowire Silicon on insulator Geometry Transistors Technology Computer Aided Design (TCAD) 0103 physical sciences field effect transistors [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det] Electrical and Electronic Engineering single-event effect (SEE) nanowire geometry Ions 010308 nuclear & particles physics business.industry TCAD calculations Logic gates SOI tri-gate silicon transient charge collection mechanisms Nuclear Energy and Engineering nanowire SOI nanowire field-effect transistors Transient (oscillation) ultrathin SOI (UTSOI) business Experiments AND gate technology CAD (electronics) |
| Zdroj: | IEEE Trans.Nucl.Sci. Conference on Radiation and its Effects on Components and Systems Conference on Radiation and its Effects on Components and Systems, Sep 2018, Gothenburg, Sweden. pp.1410-1417, ⟨10.1109/TNS.2019.2916316⟩ |
| DOI: | 10.1109/TNS.2019.2916316⟩ |
| Popis: | International audience; The single-event transient (SET) response of silicon-on-insulator (SOI) tri-gate silicon nanowires is investigated using direct measurements of current transients. The impact of nanowire geometry is discussed using the major SET characteristics: duration, amplitude, and integrated value. The experimental results demonstrate the key influence of the nanowire width on the generated current transients induced by heavy ion irradiations. Both Monte-Carlo calculations of deposited energy and Technology Computer Aided Design (TCAD) simulations give evidence of the SOI tri-gate silicon nanowires ability to mitigate generated current transients. TCAD calculations are used to discuss the impact of the main nanowire geometrical parameters which include the nanowire width, thickness, and gate length, on transient charge collection mechanisms in SOI nanowire field-effect transistors (NWFET). Thin and narrow NWFET designs enhance the control of the surrounding gate over the electrostatic potential into the nanowire. The onset of floating body effects induced by heavy ion strike is reduced which mitigates the SET generation. |
| Databáze: | OpenAIRE |
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