Low-frequency intensity noise in semiconductor lasers
Autor: | John L. Carlsten, M. M. Hall |
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Rok vydání: | 2010 |
Předmět: |
Noise temperature
Materials science Relative intensity noise business.industry Materials Science (miscellaneous) Noise spectral density Physics::Optics Injection seeder Noise figure Industrial and Manufacturing Engineering Semiconductor laser theory Optics Quantum dot laser Optoelectronics Business and International Management business Noise (radio) |
Zdroj: | Applied optics. 35(33) |
ISSN: | 1559-128X |
Popis: | The low-frequency intensity noise at 25 MHz of a Fabry–Perot semiconductor laser is measured as a function of injection current. All the measurements are taken at room temperature and the laser is operated with a commercial current source (the conditions under which laser diodes are often used). At the highest injection current of twice threshold, the intensity noise is 5.5 dB above the shot-noise limit. When the longitudinal side mode suppression of the laser is 20 dB or larger, the intensity noise is modeled adequately by an expression derived from the single-mode, small-signal, linearized, semiclassical rate equations. All the parameters used in the theory are derived or referenced. |
Databáze: | OpenAIRE |
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