Coaxial ZnSe/Si nanocables with controlled p-type shell doping
| Autor: | Jiansheng Jie, Li Wang, Di Wu, Yang Jiang, Xiwei Zhang, Zhizhong Hu, Chunyan Wu, Zhi Wang, Yongqiang Yu, Qiang Peng, Huier Guo |
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| Rok vydání: | 2010 |
| Předmět: |
Electron mobility
Materials science Mechanical Engineering Doping Nanowire Analytical chemistry Bioengineering Nanotechnology General Chemistry Chemical vapor deposition Conductivity Crystal Mechanics of Materials General Materials Science Electrical measurements Crystallite Electrical and Electronic Engineering |
| Zdroj: | Nanotechnology. 21:285206 |
| ISSN: | 1361-6528 0957-4484 |
| DOI: | 10.1088/0957-4484/21/28/285206 |
| Popis: | Coaxial ZnSe/Si nanocables were successfully produced by a simple two-step growth method. ZnSe nanowire cores were first synthesized by thermal evaporation and then followed by the chemical vapor deposition (CVD) growth of Si shells. The former have a cubic single-crystal structure with a longitudinal direction of [Formula: see text], while the latter are polycrystalline and composed of a large number of Si crystal grains with dominantly (111) surfaces. Controlled p-type doping to the Si shells was implemented by B diffusion after the shell growth. Electrical measurements on the Si shells demonstrated that the shell conductivity could be tuned in a wide range of eight orders of magnitude by adjusting the B concentration, and a hole mobility of 11.7 cm(2) V( - 1) s( - 1) and a hole concentration of 2 x 10(15) cm( - 3) were revealed for the modestly doped Si shells. The ZnSe/Si core/shell nanocables have great potential in nano-optoelectronic applications. |
| Databáze: | OpenAIRE |
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