Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO
| Autor: | Xianhua Wei, Hui-Zhong Zeng, Ni-Na Ge, Xin-Cai Yuan, Chuan-Hui Gong |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Band gap General Chemical Engineering Non-blocking I/O Doping Analytical chemistry 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 01 natural sciences Grain size Lattice constant 0103 physical sciences Electroforming Grain boundary Thin film 0210 nano-technology |
| Zdroj: | RSC advances. 8(52) |
| ISSN: | 2046-2069 |
| Popis: | We investigated the bipolar resistive switching (BRS) properties of Mn-doped NiO thin films by sol–gel spin-coating. As the Mn doping concentration increased, lattice constant, grain size and band gap were found to decrease simultaneously. Moreover, the electroforming voltages and threshold voltages were gradually reduced. It can be ascribed to the increase in the density of grain boundaries, and the defects caused by doping Mn and lower formation energy of Mn–O. They would be helpful for the formation of oxygen vacancies and conductive filaments. It is worth mentioning that excellent BRS behaviors can be obtained at a low Mn-doped concentration including enlarged ON/OFF ratio, good uniformity and stability. Compared with other samples, the 1% Mn-doped NiO showed the highest ON/OFF ratio (>106), stable endurance of >100 cycles and a retention time of >104 s. The mechanism should be determined by bulk properties rather than the dual-oxygen reservoir structure. These results indicate that appropriate Mn doping can be applied to improve the BRS characteristics of NiO thin films, and provide stable, low-power-consumption memory devices. |
| Databáze: | OpenAIRE |
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