Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
| Autor: | M. Korytov, Jean Massies, Mohamed Al Khalfioui, Philippe Vennéguès, T. Q. P. Vuong, Bernard Gil, Samuel Matta, Julien Brault, C. Chaix |
|---|---|
| Přispěvatelé: | Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Nanostructures quantiques propriétés optiques (NQPO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-14-CE26-0025,NANOGANUV,Fabrication, Modélisation, Caractérisation de Nanostructures AlGaN Auto-Assemblées pour Emetteurs UV(2014), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Fabrication Materials science business.industry wide bandgap light emitters Heterojunction 02 engineering and technology Surface finish Edge (geometry) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry Crystal wide bandga [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] 0103 physical sciences Materials Chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics Dislocation 0210 nano-technology business Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth Journal of Crystal Growth, Elsevier, 2018, 499, pp.40. ⟨10.1016/j.jcrysgro.2018.07.023⟩ |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2018.07.023⟩ |
| Popis: | International audience; AlN epilayer properties (120 nm thick) grown by ammonia assisted molecular beam epitaxy on c-sapphire substrates with different low temperature AlN buffer layers (LT-BL) have been studied. The role of the LT-BL on the AlN structural and optical properties was investigated as a function of the LT-BL thickness and growth temperature. Optimum growth conditions were identified with LT-BL thickness of 3 nm and growth temperature between 480 degrees C and 520 degrees C. It was shown that by optimizing these conditions, a reduction of both mixed and edge threading dislocation densities up to 75% is achieved. The impact of the growth temperature of the AlN epilayer was also studied showing an additional improvement of the AlN crystal and morphological properties while growing at higher temperature. A correlation between the epilayer strain and the PL emission was also investigated. Finally, an Al0.7Ga0.3N:Si doped layer was grown on the top of the optimized AlN template showing a smooth surface with monoatomic steps and a roughness similar to 0.2 nm, confirming the potential of such templates for the fabrication of AlGaN based heterostructures. |
| Databáze: | OpenAIRE |
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